d top g s d back s g wbfbp-03a plastic-encapsulate mosfet s M7002TTD03 mosfet( n-channel ) description high cell density, dmos technology. these products have been designed to minimize on-state resistance while provi de rugged, reliable, and fast switching performance. they can be used in most applications requiring up to 400ma dc and can deliver pulsed currents up to 2a. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and ot her switching applications. features high density cell design for low r ds(on) voltage controlled small signal switch rugged and reliable high saturation current capability application n-channel enhancement mode field effect transistor for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking: 72 d 72 g s maximum ratings ( t a =25 unless otherwise noted ) symbol para m eter value units v ds drain-source v oltage 60 v v gss gate-source voltage - continuous 20 v i d maximum drain current - pulsed 115 ma p d power dissipation 150 mw r ja thermal resistance from junction to ambient 833 /w t j junction temperature 150 t stg storage temperature -55-150 wbfbp-03a (1.61.60.5) unit: mm 1. gate 2. source 3. drain 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,dec ,2011
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit v gs =0v,i d =10 a 60 drain-source breakdown voltage v (br)dss v gs =0v,i d =3ma 60 gate-threshold voltage* v (gs) th v ds =v gs , i d =250 a 1 v gate- b ody leakage l gss v ds =0v, v gs =25v 100 na v ds =60v, v gs =0v 1 zero gate voltage drain current i dss v ds =60v,v gs =0v,t j =125 500 a on-state drain current* i d(on) v gs =10v, v ds =7v 500 ma v gs =10v, i d =500ma 1 7. 2 drain-source on-resistance* r ds( o n) v gs =5v, i d =50ma 1 7. 2 ? v gs =10v, i d =500ma 3.75 drain-source on- voltage * v ds( o n) v gs =5v, i d =50ma 0.375 v forward tranconductance* g f s v ds =10v, i d =200ma 80 ms diode forward voltage v sd i s =115ma, v gs =0v 1.2 v input capacitance c iss 50 output capacitance c oss 25 reverse transfer capacitance c r ss v ds =25v, v gs =0v,f=1mhz 5 pf total gate charge q g 1 gate-source charge q gs 25 gate-drain charge q d v ds =30v, v gs =10v, i d =250ma 5 nc * pulse test , pulse width 300 s, duty cycle 2% . switching time turn-on time t d( o n) 20 turn-off time t d(off) v dd =25v,r g =25 ? i d =500ma,v gen =10v r l =50 ? 40 ns 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,dec ,2011
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